Quantum Goos-Hanchen effect in graphene

Simple item page
dc.creatorBeenakker, C. W. J.
dc.creatorSepkhanov, R. A.
dc.creatorAkhmerov, A. R.
dc.creatorTworzydlo, J.
dc.date2008-12-31
dc.date2009-04-10
dc.date.accessioned2026-07-07T13:01:52Z
dc.date.available2026-07-07T13:01:52Z
dc.descriptionThe Goos-Hanchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha*=arcsin[sin alpha_c]^1/2 determined by the critical angle alpha_c for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a two-fold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e^2/h of the conductance with increasing channel width.
dc.description5 pages, 6 figures; expanded version of the published paper (one extra page, one extra figure), including also a reference to J.M. Pereira et al, PRB 74, 045424 (2006)
dc.identifierhttps://arxiv.org/abs/0901.0072
dc.identifierhttp://arxiv.org/abs/0901.0072
dc.identifierPhys. Rev. Lett. 102, 146804 (2009)
dc.identifierdoi:10.1103/PhysRevLett.102.146804
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/226291
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuantum Goos-Hanchen effect in graphene
dc.typetext

Files

Collections

arXiv