Magnetoelectric Control of Domain Walls in a Ferrite Garnet Film

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dc.creatorLogginov, A. S.
dc.creatorMeshkov, G. A.
dc.creatorNikolaev, V. A.
dc.creatorPyatakov, A. P.
dc.creatorZvezdin, A. K.
dc.date2008-01-26
dc.date.accessioned2026-07-07T08:56:42Z
dc.date.available2026-07-07T08:56:42Z
dc.descriptionThe effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field (the direction of wall displacement changes with the polarity of the voltage) and even with respect to the magnetization in domains. The inhomogeneous magnetoelectric interaction as a possible mechanism of the effect is proposed.
dc.description5 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/0801.4073
dc.identifierhttp://arxiv.org/abs/0801.4073
dc.identifierJETP Letters, v.86, p.115 (2007)
dc.identifierdoi:10.1134/S0021364007140093
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146707
dc.subjectMaterials Science
dc.titleMagnetoelectric Control of Domain Walls in a Ferrite Garnet Film
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