p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells

Simple item page
dc.creatorMaslana, W.
dc.creatorBertolini, M.
dc.creatorBoukari, H.
dc.creatorKossacki, P.
dc.creatorFerrand, D.
dc.creatorGaj, J. A.
dc.creatorTatarenko, S.
dc.creatorCibert, J.
dc.date2002-07-10
dc.date2003-02-04
dc.date.accessioned2026-07-07T06:31:08Z
dc.date.available2026-07-07T06:31:08Z
dc.descriptionWe present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.
dc.description4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0207259
dc.identifierhttp://arxiv.org/abs/cond-mat/0207259
dc.identifierAppl. Phys. Letters 82, 1875 (2003)
dc.identifierdoi:10.1063/1.1560873
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98523
dc.subjectMaterials Science
dc.titlep-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells
dc.typetext

Files

Collections

arXiv