Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study

Simple item page
dc.creatorButenko, A. V.
dc.creatorSandomirsky, V.
dc.creatorKahatabi, R.
dc.creatorSchlesinger, Y.
dc.creatorDashevsky, Z.
dc.creatorKasiyan, V.
dc.date2007-07-12
dc.date.accessioned2026-07-07T08:16:14Z
dc.date.available2026-07-07T08:16:14Z
dc.descriptionWe report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage and chopper frequency. The measured pyroelectric coefficient is about 10^(-3) microC/cm2K in the region of 40-80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.
dc.identifierhttps://arxiv.org/abs/0707.1773
dc.identifierhttp://arxiv.org/abs/0707.1773
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/133709
dc.subjectOther Condensed Matter
dc.titlePyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study
dc.typetext

Files

Collections

arXiv