Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon

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dc.creatorBuin, A. K.
dc.creatorVerma, A.
dc.creatorSvizhenko, A.
dc.creatorAnantram, M. P
dc.date2008-05-09
dc.date2008-06-02
dc.date.accessioned2026-07-07T09:41:48Z
dc.date.available2026-07-07T09:41:48Z
dc.descriptionUtilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/Vs, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed that of similar diameter [100] SiNWs, with nearly two orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.
dc.identifierhttps://arxiv.org/abs/0805.1394
dc.identifierhttp://arxiv.org/abs/0805.1394
dc.identifierNano Lett.; (Letter); 2008; 8(2); 760-765
dc.identifierdoi:10.1021/nl0727314
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/161958
dc.subjectMaterials Science
dc.titleSignificant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon
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