Spin current as a response to external stress

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dc.creatorSharma, Prashant
dc.date2005-11-11
dc.date.accessioned2026-07-07T06:46:01Z
dc.date.available2026-07-07T06:46:01Z
dc.descriptionIt is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for $n$-doped semiconductors). We show that this spin-current is a property of the Fermi-Dirac sea, and is controlled by a geometric phase accumulated by the strain-induced Rashba parameters in a cycle.
dc.description5 pages and 2 figures in eps format
dc.identifierhttps://arxiv.org/abs/cond-mat/0511270
dc.identifierhttp://arxiv.org/abs/cond-mat/0511270
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/103206
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSpin current as a response to external stress
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