Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Simple item page
dc.creatorLin, Yu-Ming
dc.creatorAppenzeller, Joerg
dc.creatorKnoch, Joachin
dc.creatorChen, Zhihong
dc.creatorAvouris, Phaedon
dc.date2005-12-22
dc.date.accessioned2026-07-07T08:49:44Z
dc.date.available2026-07-07T08:49:44Z
dc.descriptionWe present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.
dc.identifierhttps://arxiv.org/abs/cond-mat/0512595
dc.identifierhttp://arxiv.org/abs/cond-mat/0512595
dc.identifierNano Lett. 2006; 6(5); 930-936
dc.identifierdoi:10.1021/nl052528d
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/144408
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleLow-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
dc.typetext

Files

Collections

arXiv