Room temperature tunneling anisotropic and collinear magnetoresistance

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dc.creatorGrigorenko, A. N.
dc.creatorNovoselov, K. S.
dc.creatorMapps, D. J.
dc.date2006-11-29
dc.date.accessioned2026-07-07T07:31:31Z
dc.date.available2026-07-07T07:31:31Z
dc.descriptionWe report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when the layer magnetizations are rotated collinearly in the junction plane by an applied external field. The angular dependence of the tunneling anisotropic magnetoresistance could be explained by the presence of an antiferromagnetic oxide layer formed within the barrier.
dc.description17 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0611751
dc.identifierhttp://arxiv.org/abs/cond-mat/0611751
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/118783
dc.subjectOther Condensed Matter
dc.titleRoom temperature tunneling anisotropic and collinear magnetoresistance
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