Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

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dc.creatorDasgupta, S.
dc.creatorKnaak, C.
dc.creatorMoser, J.
dc.creatorBichler, M.
dc.creatorRoth, S. F.
dc.creatorMorral, A. Fontcuberta i
dc.creatorAbstreiter, G.
dc.creatorGrayson, M.
dc.date2007-07-12
dc.date2007-09-18
dc.date.accessioned2026-07-07T09:23:09Z
dc.date.available2026-07-07T09:23:09Z
dc.descriptionA doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow post-illumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring post-illumination annealing to T = 30 K to saturate the PPC. Dark and post-illumination doping efficiencies are reported.
dc.descriptionThe values of binding energy changed from previous versions because of a better understanding for the dielectric permittivity. Also, the Gamma - X donor states are better explained
dc.identifierhttps://arxiv.org/abs/0707.1796
dc.identifierhttp://arxiv.org/abs/0707.1796
dc.identifierAPL 91, 142120 (2007)
dc.identifierdoi:10.1063/1.2794012
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155629
dc.subjectMesoscale and Nanoscale Physics
dc.titleDonor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells
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