Raman spectroscopy and imaging of graphene
| dc.creator | Ni, Zhen hua | |
| dc.creator | Wang, Ying ying | |
| dc.creator | Yu, Ting | |
| dc.creator | Shen, Ze xiang | |
| dc.date | 2008-10-16 | |
| dc.date.accessioned | 2026-07-07T10:10:35Z | |
| dc.date.available | 2026-07-07T10:10:35Z | |
| dc.description | Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. Following, the strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are closely related to the application of graphene on nano-electronic device and help on the better understanding of physical and electronic properties of graphene. | |
| dc.description | 32 pages, 14 figures | |
| dc.identifier | https://arxiv.org/abs/0810.2836 | |
| dc.identifier | http://arxiv.org/abs/0810.2836 | |
| dc.identifier | Nano Research 1, 273 (2008) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/171639 | |
| dc.subject | Materials Science | |
| dc.title | Raman spectroscopy and imaging of graphene | |
| dc.type | text |