Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

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dc.creatorHazdra, P.
dc.creatorVoves, J.
dc.creatorOswald, J.
dc.creatorKuldova, K.
dc.creatorHospodkova, A.
dc.creatorHulicius, E.
dc.creatorPangrac, J.
dc.date2007-08-10
dc.date.accessioned2026-07-07T08:23:10Z
dc.date.available2026-07-07T08:23:10Z
dc.descriptionStructures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0708.1468
dc.identifierhttp://arxiv.org/abs/0708.1468
dc.identifierDans European Nano Systems Worshop - ENS 2006, Paris : France (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135897
dc.subjectMaterials Science
dc.titleOptical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots
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