Photogalvanic current in artificial asymmetric nanostructures

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dc.creatorChepelianskii, A. D.
dc.creatorEntin, M. V.
dc.creatorMagarill, L. I.
dc.creatorShepelyansky, D. L.
dc.date2007-01-06
dc.date.accessioned2026-07-07T08:05:43Z
dc.date.available2026-07-07T08:05:43Z
dc.descriptionWe develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range.
dc.description11 pages, 9 figs, EPJ latex style
dc.identifierhttps://arxiv.org/abs/cond-mat/0701128
dc.identifierhttp://arxiv.org/abs/cond-mat/0701128
dc.identifierEur. Phys. J. B v.56, p.323-333 (2007)
dc.identifierdoi:10.1140/epjb/e2007-00127-2
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130369
dc.subjectMesoscale and Nanoscale Physics
dc.titlePhotogalvanic current in artificial asymmetric nanostructures
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