Resonant tunneling diode with spin polarized injector

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dc.creatorSlobodskyy, A.
dc.creatorGould, C.
dc.creatorSlobodskyy, T.
dc.creatorSchmidt, G.
dc.creatorMolenkamp, L. W.
dc.creatorSanchez, D.
dc.date2007-03-22
dc.date.accessioned2026-07-07T07:53:10Z
dc.date.available2026-07-07T07:53:10Z
dc.descriptionWe investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth.
dc.description10 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703574
dc.identifierhttp://arxiv.org/abs/cond-mat/0703574
dc.identifierAppl. Phys. Lett. 90, 122109 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126153
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleResonant tunneling diode with spin polarized injector
dc.typetext

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