An improved kinetic Monte Carlo approach for epitaxial submonolayer growth

dc.creatorDeak, Robert
dc.creatorNeda, Zoltan
dc.creatorBarna, Peter B.
dc.date2007-07-05
dc.date.accessioned2026-07-07T08:14:05Z
dc.date.available2026-07-07T08:14:05Z
dc.descriptionTwo-component submonolayer growth on triangular lattice is qualitatively studied by kinetic Monte Carlo techniques. The hopping barrier governing surface diffusion of the atoms is estimated with an improved formula and using realistic pair interaction potentials. Realistic degrees of freedoms enhancing the surface diffusion of atoms are also introduced. The main advantages of the presented technique are the reduced number of free parameters and the clear diffusion activated mechanism for the segregation of different types of atoms. The potential of this method is exemplified by reproducing (i) vacancy and stacking fault related phase-boundary creation and dynamics; (ii) a special co-deposition and segregation process where the segregated atoms of the second component surrounds the islands formed by the first type of atoms.
dc.description12 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/0707.0715
dc.identifierhttp://arxiv.org/abs/0707.0715
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/133000
dc.subjectSoft Condensed Matter
dc.subjectMaterials Science
dc.titleAn improved kinetic Monte Carlo approach for epitaxial submonolayer growth
dc.typetext

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