Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties

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dc.creatorAvramov, Pavel V.
dc.creatorChernozatonskii, Leonid A.
dc.creatorSorokin, Pavel B.
dc.creatorGordon, Mark S.
dc.date2007-09-14
dc.date.accessioned2026-07-07T08:29:38Z
dc.date.available2026-07-07T08:29:38Z
dc.descriptionUsing empirical scheme, atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by presence of the proposed objects. The Extended Huckel Theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.
dc.description13 pages, 3 figures, 1 table
dc.identifierhttps://arxiv.org/abs/0709.2251
dc.identifierhttp://arxiv.org/abs/0709.2251
dc.identifierdoi:10.1021/nl070973y
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/138004
dc.subjectMaterials Science
dc.titleMultiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties
dc.typetext

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