Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

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dc.creatorMcCamey, D. R.
dc.creatorHuebl, H.
dc.creatorBrandt, M. S.
dc.creatorHutchison, W. D.
dc.creatorMcCallum, J. C.
dc.creatorClark, R. G.
dc.creatorHamilton, A. R.
dc.date2006-05-22
dc.date.accessioned2026-07-07T07:09:05Z
dc.date.available2026-07-07T07:09:05Z
dc.descriptionWe present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.
dc.description9 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0605516
dc.identifierhttp://arxiv.org/abs/cond-mat/0605516
dc.identifierApplied Physics Letters 89, 182115 (2006)
dc.identifierdoi:10.1063/1.2358928
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/110933
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleElectrically-detected magnetic resonance in ion-implanted Si:P nanostructures
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