Inverse Raman Scattering in Silicon
| dc.creator | Solli, D. R. | |
| dc.creator | Koonath, P. | |
| dc.creator | Jalali, B. | |
| dc.date | 2008-10-10 | |
| dc.date.accessioned | 2026-07-07T10:09:12Z | |
| dc.date.available | 2026-07-07T10:09:12Z | |
| dc.description | Stimulated Raman scattering is a well-known nonlinear process that can be harnessed to produce optical gain in a wide variety of media. This effect has been used to produce the first silicon-based lasers and high-gain amplifiers. Interestingly, the Raman effect can also produce intensity-dependent nonlinear loss through a corollary process known as inverse Raman scattering (IRS). Here, we demonstrate IRS in silicon--a process that is substantially modified by the presence of optically-generated free carriers--achieving attenuation levels >15 dB with a pump intensity of 4 GW/cm^2. Ironically, we find that free-carrier absorption, the detrimental effect that suppresses other nonlinear effects in silicon, actually facilitates IRS by delaying the onset of contamination from coherent anti-Stokes Raman scattering. The carriers allow significant IRS attenuation over a wide intensity range. Silicon-based IRS could be used to produce chip-scale wavelength-division multiplexers, optical signal inverters, and fast optical switches. | |
| dc.identifier | https://arxiv.org/abs/0810.1939 | |
| dc.identifier | http://arxiv.org/abs/0810.1939 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/171246 | |
| dc.subject | Optics | |
| dc.title | Inverse Raman Scattering in Silicon | |
| dc.type | text |