An optimised algorithm for ionized impurity scattering in Monte Carlo simulations

dc.creatorWenckebach, W. Th.
dc.creatorKinsler, P.
dc.date2005-06-24
dc.date.accessioned2026-07-07T03:05:47Z
dc.date.available2026-07-07T03:05:47Z
dc.descriptionWe present a new optimised model of Brookes-Herring ionized impurity scattering for use in Monte Carlo simulations of semiconductors. When implemented, it greatly decreases the execution time needed for simulations (typically by a factor of the order of 100), and also properly incorporates the great proportion of small angle scatterings that are neglected in the standard algorithm. It achieves this performance by using an anisotropic choice of scattering angle which accurately mimics the true angular distribution of ionized impurity scattering.
dc.description5 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0506641
dc.identifierhttp://arxiv.org/abs/cond-mat/0506641
dc.identifierComputer Physics Communications 143, 136 (2002)
dc.identifierdoi:10.1016/S0010-4655(01)00440-4
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26579
dc.subjectOther Condensed Matter
dc.titleAn optimised algorithm for ionized impurity scattering in Monte Carlo simulations
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