Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

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dc.creatorBihler, C.
dc.creatorAlthammer, M.
dc.creatorBrandlmaier, A.
dc.creatorGepraegs, S.
dc.creatorWeiler, M.
dc.creatorOpel, M.
dc.creatorSchoch, W.
dc.creatorLimmer, W.
dc.creatorGross, R.
dc.creatorBrandt, M. S.
dc.creatorGoennenwein, S. T. B.
dc.date2008-04-08
dc.date.accessioned2026-07-07T09:49:16Z
dc.date.available2026-07-07T09:49:16Z
dc.descriptionWe have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.
dc.identifierhttps://arxiv.org/abs/0804.1336
dc.identifierhttp://arxiv.org/abs/0804.1336
dc.identifierPhys. Rev. B 78, 045203 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.045203
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164524
dc.subjectMaterials Science
dc.titlePiezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
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