Two insulating phases in compressed Pr1-xCaxMnO3 thin films

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dc.creatorFilippi, M.
dc.creatorPrellier, W.
dc.creatorAuban-Senzier, P.
dc.creatorPasquier, C. R.
dc.date2008-09-12
dc.date.accessioned2026-07-07T10:08:59Z
dc.date.available2026-07-07T10:08:59Z
dc.descriptionThe temperature dependent resistivity of two Pr1-xCaxMnO3 (x=0.5 and 0.4) thin films grown on LaAlO3 has been studied as a function of hydrostatic pressure (up to 2.5 GPa) and magnetic field (up to 9T). Both samples show a monotonic decrease in the resistivity with an increase in pressure, corresponding to a change of -35% at 2.5 GPa. No pressure induced metal-to-insulator transition was observed in the temperature-dependent resistivity. The non-trivial interaction between high pressure and magnetic field reveals that the effect of pressure cannot be simply rescaled to that of a specific field, as has been reported for the corresponding bulk material. We propose an interpretation of the data based on phase separation, where two different insulating phases coexist: the charge ordered phase, which is sensitive to both magnetic field and pressure, and a second insulating phase that can be tuned by magnetic field. Such a result demonstrates that phase separation can be manipulated in thin films by independent application of magnetic field and/or external pressure.
dc.description9 pages, 3 figuresn submitted to Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/0809.2184
dc.identifierhttp://arxiv.org/abs/0809.2184
dc.identifierAppl. Phys. Lett. 93, 142110 (2008)
dc.identifierdoi:10.1063/1.2993347
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/171190
dc.subjectMaterials Science
dc.titleTwo insulating phases in compressed Pr1-xCaxMnO3 thin films
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