Test beam results of ATLAS Pixel Sensors
| dc.creator | Lari, T. | |
| dc.date | 2002-10-18 | |
| dc.date.accessioned | 2026-07-07T03:35:36Z | |
| dc.date.available | 2026-07-07T03:35:36Z | |
| dc.description | Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental behaviour of the detectors after irradiation to 1.1 10**15 n_eq/cm**2 and 600 kGy is discussed. At the sensor bias voltage of 600 V the depleted depth is measured to be 229 um, the mean collected charge is 20000 electrons, the detection efficiency is 98.2% and the spatial resolution is 9.6 um | |
| dc.description | 8 pages, 6 figures, Pixel2002 conference | |
| dc.identifier | https://arxiv.org/abs/hep-ex/0210045 | |
| dc.identifier | http://arxiv.org/abs/hep-ex/0210045 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/37411 | |
| dc.subject | High Energy Physics - Experiment | |
| dc.title | Test beam results of ATLAS Pixel Sensors | |
| dc.type | text |