Computer simulated heat flow dynamics in Silicon at low temperatures

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dc.creatorDiedrich, H.
dc.creatorLiberati, R.
dc.date2007-08-30
dc.date.accessioned2026-07-07T08:26:39Z
dc.date.available2026-07-07T08:26:39Z
dc.descriptionThe thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set of experimental data. The numerical results are given in graphic form and show, in particular, very short diffusion transit times across long distances. The computed figures require experimental confrontations; a test set-up is proposed.
dc.description8 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0708.4080
dc.identifierhttp://arxiv.org/abs/0708.4080
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137012
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleComputer simulated heat flow dynamics in Silicon at low temperatures
dc.typetext

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