In-Plane Bistable Nanowire For Memory Devices

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dc.creatorCharlot, B.
dc.creatorSun, W.
dc.creatorYamashita, K.
dc.creatorFujita, H.
dc.creatorToshiyoshi, H.
dc.date2008-05-07
dc.date.accessioned2026-07-07T12:18:40Z
dc.date.available2026-07-07T12:18:40Z
dc.descriptionWe present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$μ$m) clamped at its both ends. Electrodes are placed on each sides of the nanowire and are used to actuate the structure (writing, erasing) and to measure the position through a capactive bridge (reading). The structure is patterned by electron beam lithography on a pre-stressed thermally grown silicon dioxide layer. When later released, the stressed material relaxes and the beam buckles in a position of lower energy. Such symmetric beams, called Euler beams, show two stable deformed positions thus form a bistable structure. This paper will present the fabrication, simulation and mechanical and electrical actuation of an in plane bistable nanowire. Final paper will include a section on FEM simulations.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)
dc.identifierhttps://arxiv.org/abs/0805.0889
dc.identifierhttp://arxiv.org/abs/0805.0889
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2008, Nice : France (2008)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/212491
dc.subjectOther Computer Science
dc.titleIn-Plane Bistable Nanowire For Memory Devices
dc.typetext

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