Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co

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dc.creatorToyosaki, H.
dc.creatorFukumura, T.
dc.creatorYamada, Y.
dc.creatorNakajima, K.
dc.creatorChikyow, T.
dc.creatorHasegawa, T.
dc.creatorKoinuma, H.
dc.creatorKawasaki, M.
dc.date2003-07-31
dc.date.accessioned2026-07-07T02:52:41Z
dc.date.available2026-07-07T02:52:41Z
dc.descriptionA ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibilities of spintronics devices operable at room temperature.
dc.description8 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0307760
dc.identifierhttp://arxiv.org/abs/cond-mat/0307760
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21933
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleCarrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co
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