Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures
| dc.creator | Cao, J. C. | |
| dc.date | 2003-12-02 | |
| dc.date.accessioned | 2026-07-07T02:55:07Z | |
| dc.date.available | 2026-07-07T02:55:07Z | |
| dc.description | We have theoretically investigated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long standing experimental result on the nonlinear absorption in THz regime. | |
| dc.description | 4 pages including 3 EPS figs | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0312057 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0312057 | |
| dc.identifier | J. C. Cao, Physical Review Letters 91, 237401 (2003) | |
| dc.identifier | doi:10.1103/PhysRevLett.91.237401 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/22824 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures | |
| dc.type | text |