Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy

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dc.creatorLee, E. J. H.
dc.creatorBalasubramanian, K.
dc.creatorDorfmueller, J.
dc.creatorVogelgesang, R.
dc.creatorFu, N.
dc.creatorMews, A.
dc.creatorBurghard, M.
dc.creatorKern, K.
dc.date2007-05-23
dc.date.accessioned2026-07-07T08:03:00Z
dc.date.available2026-07-07T08:03:00Z
dc.descriptionSpatially resolved photocurrent measurements on carbon nanotube field-effect transistors (CNFETs) operated in various transport regimes are reported. It is demonstrated that the photocurrents measured at different biasing conditions provide access to the electronic band structure profile of the nanotube channel. A comparison of the profiles with the device switched into n- or p-type states clearly evidences the impact of chemical doping from the ambient. Moreover, we show that scanning photocurrent microscopy constitutes an effective and facile technique for the quantitative determination of the Schottky barrier height in such devices.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0705.3407
dc.identifierhttp://arxiv.org/abs/0705.3407
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129421
dc.subjectMaterials Science
dc.titleElectronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy
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