Negative Differential Resistance of Electrons in Graphene Barrier

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dc.creatorDragoman, Daniela
dc.creatorDragoman, Mircea
dc.date2007-01-02
dc.date.accessioned2026-07-07T07:38:07Z
dc.date.available2026-07-07T07:38:07Z
dc.descriptionThe graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac equation rather than by the Schrodinger equation. As a result, a graphene barrier behaves very differently compared to a common semiconductor barrier. We show that a single graphene barrier acts as a switch with a very high on-off ratio and displays a significant differential negative resistance, which promotes graphene as a key material in nanoelectronics.
dc.identifierhttps://arxiv.org/abs/quant-ph/0701011
dc.identifierhttp://arxiv.org/abs/quant-ph/0701011
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/121003
dc.subjectQuantum Physics
dc.titleNegative Differential Resistance of Electrons in Graphene Barrier
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