Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers

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dc.creatorSih, V.
dc.creatorKnotz, H.
dc.creatorStephens, J.
dc.creatorHorowitz, V. R.
dc.creatorGossard, A. C.
dc.creatorAwschalom, D. D.
dc.date2006-03-29
dc.date.accessioned2026-07-07T07:05:03Z
dc.date.available2026-07-07T07:05:03Z
dc.descriptionTime-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift diffusion model is used to relate the magnitude of the measured spin-orbit splitting to the amount of strain in the sample.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0603775
dc.identifierhttp://arxiv.org/abs/cond-mat/0603775
dc.identifierPhys. Rev. B 73, 241316(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.73.241316
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109543
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleMechanical control of spin-orbit splitting in GaAs and InGaAs epilayers
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