Kondo Shuttling in Nanoelectromechanical Single-Electron Transistor

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dc.creatorKiselev, M. N.
dc.creatorKikoin, K.
dc.creatorShekhter, R. I.
dc.creatorVinokur, V. M.
dc.date2006-04-06
dc.date.accessioned2026-07-07T07:46:08Z
dc.date.available2026-07-07T07:46:08Z
dc.descriptionWe investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic particle) with the spin results in the time dependent tunneling width which leads to effective increase of the Kondo temperature. The time-dependent oscillating Kondo temperature T_K(t) changes the scaling behavior of the differential conductance resulting in the suppression of transport in a strong coupling- and its enhancement in a weak coupling regimes. The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible experimental realization of the Kondo shuttling are discussed.
dc.description4 pages, 2 eps figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0604150
dc.identifierhttp://arxiv.org/abs/cond-mat/0604150
dc.identifierPhys. Rev. B 74, 233403 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.233403
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123729
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleKondo Shuttling in Nanoelectromechanical Single-Electron Transistor
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