Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$

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dc.creatorKobayashi, M.
dc.creatorIshida, Y.
dc.creatorHwang, J. I.
dc.creatorSong, G. S.
dc.creatorTakizawa, M.
dc.creatorFujimori, A.
dc.creatorTakeda, Y.
dc.creatorOhkochi, T.
dc.creatorOkane, T.
dc.creatorSaitoh, Y.
dc.creatorYamagami, H.
dc.creatorGupta, Amita
dc.creatorCao, H. T.
dc.creatorRao, K. V.
dc.date2008-01-28
dc.date.accessioned2026-07-07T13:12:24Z
dc.date.available2026-07-07T13:12:24Z
dc.descriptionThe electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0801.4244
dc.identifierhttp://arxiv.org/abs/0801.4244
dc.identifierPhysical Review B 79, 205203 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.205203
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/229565
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleHybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$
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