Acousto-optic effects of surface acoustic waves in semiconductor quantum well structures

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dc.creatorRocke, C.
dc.creatorWixforth, A.
dc.creatorKotthaus, J. P.
dc.creatorBoehm, H.
dc.creatorWeimann, G.
dc.date1996-09-26
dc.date1996-09-27
dc.date.accessioned2026-07-07T09:02:31Z
dc.date.available2026-07-07T09:02:31Z
dc.descriptionWe report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we study the photoluminescence (PL) of an undoped strained InGaAs/GaAs quantum well on which surface acoustic waves are propagated in the GHz regime. We observe a pronounced influence on the PL, both in intensity as well as in energetic position: Above a critical acoustic power density and corresponding lateral piezoelectric field strength, we observe a quenching of the excitons resulting in a strong decrease of the PL intensity. Using two transducers in a cavity resonator geometry, we can create a standing surface acoustic wave and hence control the nature and efficiency of the acoustic transport of the photoexcited electrons and holes.
dc.description4 pages, 3 Figs. included revision necessary due to techical problems
dc.identifierhttps://arxiv.org/abs/cond-mat/9609250
dc.identifierhttp://arxiv.org/abs/cond-mat/9609250
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/148662
dc.subjectCondensed Matter
dc.titleAcousto-optic effects of surface acoustic waves in semiconductor quantum well structures
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