Dislocation formation from a surface step in semiconductors: an ab initio study

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dc.creatorGodet, Julien
dc.creatorBrochard, Sandrine
dc.creatorPizzagalli, Laurent
dc.creatorBeauchamp, Pierre
dc.creatorSoler, Jose M.
dc.date2007-09-11
dc.date.accessioned2026-07-07T08:28:44Z
dc.date.available2026-07-07T08:28:44Z
dc.descriptionThe role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms.
dc.identifierhttps://arxiv.org/abs/0709.1579
dc.identifierhttp://arxiv.org/abs/0709.1579
dc.identifierPhysical Review B 73, 9 (2006) 092105
dc.identifierdoi:10.1103/PhysRevB.73.092105
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137725
dc.subjectMaterials Science
dc.titleDislocation formation from a surface step in semiconductors: an ab initio study
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