Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators

dc.creatorTohyama, T.
dc.date2005-08-22
dc.date2006-01-13
dc.date.accessioned2026-07-07T06:41:37Z
dc.date.available2026-07-07T06:41:37Z
dc.descriptionSymmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_{x^2-y^2} wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimum-energy excitation in the A1 (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.
dc.description7 pages, 9 figures, revised version, Journal of Physical Society of Japan, Vol.75, No.3, in press
dc.identifierhttps://arxiv.org/abs/cond-mat/0508519
dc.identifierhttp://arxiv.org/abs/cond-mat/0508519
dc.identifierJ. Phys. Soc. Jpn. 75, 034713 (2006)
dc.identifierdoi:10.1143/JPSJ.75.034713
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101733
dc.subjectStrongly Correlated Electrons
dc.titleSymmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators
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