The Hall effect and hole densities in high Tc GaMnAs thin films
| dc.creator | Edmonds, K. W. | |
| dc.creator | Wang, K. Y. | |
| dc.creator | Campion, R. P. | |
| dc.creator | Neumann, A. C. | |
| dc.creator | Foxon, C. T. | |
| dc.creator | Gallagher, B. L. | |
| dc.creator | Main, P. C. | |
| dc.date | 2002-05-24 | |
| dc.date | 2002-08-23 | |
| dc.date.accessioned | 2026-07-07T02:45:36Z | |
| dc.date.available | 2026-07-07T02:45:36Z | |
| dc.description | By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates Tc at large x and underestimates TC at low x. | |
| dc.description | Submitted to Appl. Phys. Lett., 8 pages, 4 figs | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0205517 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0205517 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/19356 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | The Hall effect and hole densities in high Tc GaMnAs thin films | |
| dc.type | text |