Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

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dc.creatorZhang, Ying
dc.creatorSarma, S. Das
dc.date2005-09-12
dc.date2005-12-15
dc.date.accessioned2026-07-07T06:41:46Z
dc.date.available2026-07-07T06:41:46Z
dc.descriptionWe introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at rs=5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (~15%) is more modest in three dimensions around metallic densities (rs~5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.
dc.descriptionFinal version
dc.identifierhttps://arxiv.org/abs/cond-mat/0509300
dc.identifierhttp://arxiv.org/abs/cond-mat/0509300
dc.identifierPhys. Rev. Lett. 95, 256603 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.256603
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101788
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleSpin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass
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