Spatially resolved spectroscopy of monolayer graphene on SiO2

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dc.creatorDeshpande, A.
dc.creatorBao, W.
dc.creatorMiao, F.
dc.creatorLau, C. N.
dc.creatorLeRoy, B. J.
dc.date2008-12-05
dc.date2009-03-19
dc.date.accessioned2026-07-07T13:15:46Z
dc.date.available2026-07-07T13:15:46Z
dc.descriptionWe have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy, we observe short range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects and the underlying SiO$_2$ substrate.
dc.description6 pages, 7 figures, extended version
dc.identifierhttps://arxiv.org/abs/0812.1073
dc.identifierhttp://arxiv.org/abs/0812.1073
dc.identifierPhys. Rev. B 79, 205411 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.205411
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230579
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSpatially resolved spectroscopy of monolayer graphene on SiO2
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