Towards a new concept of photomultiplier based on silicon technology

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dc.creatorPriviteraa, S.
dc.creatorTudisco, S.
dc.creatorLanzano, L.
dc.creatorMusumeci, F.
dc.creatorPluchino, A.
dc.creatorScordino, A.
dc.creatorCampisi, A.
dc.creatorCosentino, L.
dc.creatorFinocchiaro, P.
dc.creatorCondorelli, G.
dc.creatorMazzillo, M.
dc.creatorLombardo, S.
dc.creatorSciacca, E.
dc.date2007-05-04
dc.date.accessioned2026-07-07T07:59:33Z
dc.date.available2026-07-07T07:59:33Z
dc.descriptionIn order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed. Single photons sensitivity, dark noise and timing resolution of the SPAD- STM devices in several experimental conditions have been evaluated. Moreover, the effects arising from the multiple integration of many elements and the study of their common read-out have been deeply investigated.
dc.description23 pages, 15 figures, 2 tables
dc.identifierhttps://arxiv.org/abs/0705.0672
dc.identifierhttp://arxiv.org/abs/0705.0672
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/128408
dc.subjectInstrumentation and Detectors
dc.titleTowards a new concept of photomultiplier based on silicon technology
dc.typetext

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