Broadband dielectric microwave microscopy on $μ$m length scales
| dc.creator | Tselev, Alexander | |
| dc.creator | Anlage, Steven M. | |
| dc.creator | Ma, Zhengkun | |
| dc.creator | Melngailis, John | |
| dc.date | 2007-02-25 | |
| dc.date.accessioned | 2026-07-07T08:00:49Z | |
| dc.date.available | 2026-07-07T08:00:49Z | |
| dc.description | We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially-resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a Focused Ion Beam (FIB) milled structure on a high-dielectric-constant Ba_{0.6}Sr_{0.4}TiO_3 (BSTO) thin film in the frequency range from 1.3 GHz to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above ~10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images. | |
| dc.description | 19 pages (preprint format), 5 figures; to be published in Review of Scientific Instruments | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0702573 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0702573 | |
| dc.identifier | Rev. Sci. Instrum. 78, 044701 (2007) | |
| dc.identifier | doi:10.1063/1.2719613 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/128769 | |
| dc.subject | Materials Science | |
| dc.subject | Other Condensed Matter | |
| dc.title | Broadband dielectric microwave microscopy on $μ$m length scales | |
| dc.type | text |