Ultrasonic Defect Modification in Irradiated Silicon

Simple item page
dc.creatorCremaldi, Lucien
dc.creatorOstrovskii, Igor
dc.date2003-10-29
dc.date.accessioned2026-07-07T02:54:28Z
dc.date.available2026-07-07T02:54:28Z
dc.descriptionIt is shown for the first time, that room temperature Ultrasonic Defect Manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary Ion Mass Spectroscopy revealed that oxygen- and hydrogen- related chemical reactions in silicon are likely to occur under UDM at room temperature. Ultrasonically stimulated chemical reactions in solids can be an important source of energy, which is required for UDM.
dc.description9 pages, 2 figures; corrected typos in the text and figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0310675
dc.identifierhttp://arxiv.org/abs/cond-mat/0310675
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22563
dc.subjectMaterials Science
dc.subjectHigh Energy Physics - Experiment
dc.titleUltrasonic Defect Modification in Irradiated Silicon
dc.typetext

Files

Collections

arXiv