Study of ion beam induced mixing in nano-layered Si/C multilayer structures

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dc.creatorPrakash, Ram
dc.creatorAmirthapandian, S.
dc.creatorPhase, D. M.
dc.creatorDeshpande, S. K.
dc.creatorKesavamoorthy, R.
dc.creatorNair, K. G. M.
dc.date2006-01-11
dc.date.accessioned2026-07-07T06:57:28Z
dc.date.available2026-07-07T06:57:28Z
dc.descriptionThe effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. The [Si (3.0 nm) / C (2.5 nm)]x10 /Si multilayer films were prepared by electron beam evaporation under ultra high vacuum (UHV) environment. The layer thicknesses were measured using in-situ quartz crystal oscillator. These multilayer films were subjected to 40 keV Ar+ ion irradiation with fluences 5E-16 (low fluence) and 1E-17 ions / cm2 (high fluence).The as-prepared and irradiated multilayer samples were annealed at 773 K for one hour. The GIXRD and Raman spectroscopy results reveal the formation of different phases of SiC in these multilayer structures. Deposition induced reactions at the nano-structured interface and subsequent room temperature Ar ion irradiation at low fluence result in formation of the hexagonal SiC phase. High fluence Ar+ ion irradiation and subsequent annealing at 773 K for one hour leads to precipitation of the cubic-SiC phase.
dc.description16 pages, 3 figures. to be appear soon in NIM B (article in press)
dc.identifierhttps://arxiv.org/abs/cond-mat/0601224
dc.identifierhttp://arxiv.org/abs/cond-mat/0601224
dc.identifierNuclear Instruments and Methods B 244 (2006) 283-288
dc.identifierdoi:10.1016/j.nimb.2005.11.044
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/106982
dc.subjectMaterials Science
dc.titleStudy of ion beam induced mixing in nano-layered Si/C multilayer structures
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