Schottky-barrier double-walled carbon nanotube field-effect transistors
| dc.creator | Wang, Shidong | |
| dc.creator | Grifoni, Milena | |
| dc.date | 2007-03-06 | |
| dc.date | 2007-07-26 | |
| dc.date.accessioned | 2026-07-07T08:20:18Z | |
| dc.date.available | 2026-07-07T08:20:18Z | |
| dc.description | We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show asymmetries of the $I$-$V$ characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon nanotube FET. | |
| dc.description | 4 pages, 3 figures. Published form | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0703145 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0703145 | |
| dc.identifier | Phys. Rev. B 76, 033413 (2007) | |
| dc.identifier | doi:10.1103/PhysRevB.76.033413 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/135034 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Schottky-barrier double-walled carbon nanotube field-effect transistors | |
| dc.type | text |