Gate voltage effects in capacitively coupled quantum dots
| dc.creator | Mitchell, Andrew K. | |
| dc.creator | Galpin, Martin R. | |
| dc.creator | Logan, David E. | |
| dc.date | 2006-11-08 | |
| dc.date.accessioned | 2026-07-07T07:31:15Z | |
| dc.date.available | 2026-07-07T07:31:15Z | |
| dc.description | We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale of the model is shown to vary significantly with the gate voltage, being exponentially small when spin and pseudospin degrees of freedom dominate; but increasing to much larger values when the gate voltage is tuned close to the edges of the Coulomb blockade staircase where low-energy charge-fluctuations also enter, leading thereby to correlated electron physics on energy/temperature scales more accessible to experiment. This range of behaviour is also shown to be manifest strongly in single-particle dynamics and electron transport through each dot. | |
| dc.description | 8 pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0611219 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0611219 | |
| dc.identifier | Europhys. Lett., 76, 95 (2006) | |
| dc.identifier | doi:10.1209/epl/i2006-10219-1 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/118685 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Gate voltage effects in capacitively coupled quantum dots | |
| dc.type | text |