Lateral optical anisotropy of type-II interfaces in the tight-binding approach

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dc.creatorIvchenko, E. L.
dc.creatorNestoklon, M. O.
dc.date2004-03-11
dc.date.accessioned2026-07-07T10:07:53Z
dc.date.available2026-07-07T10:07:53Z
dc.descriptionWe have developed the tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C'A' grown from the zinc-blende semiconductors CA and C'A' along the crystallographic direction [001]. The sp^3s* nearest-neighbor tight-binding model with allowance for the spin-orbit interaction is used to calculate the energy states and the in-plane linear polarization of the spatially-indirect band-edge photoluminescence of InAs/AlSb and ZnSe/BeTe multi-layered structures. The interface parameters for a pair of the nonstandard planes C-A' or C'-A are considered as fitting variables. A wide range of these parameters are shown to allow Tamm-like hole states localized at the interfaces. The theory leads to giant values of the light polarization in the both type-II heterosystems in agreement with existing experimental findings.
dc.description9 pages, 6 figures, submitted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0403297
dc.identifierhttp://arxiv.org/abs/cond-mat/0403297
dc.identifierPhys. Rev. B 70, 235332 (2004)
dc.identifierdoi:10.1103/PhysRevB.70.235332
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170804
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleLateral optical anisotropy of type-II interfaces in the tight-binding approach
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