Variable range hopping in thin film with large dielectric constant
| dc.creator | Shklovskii, B. I. | |
| dc.date | 2008-03-24 | |
| dc.date | 2008-04-07 | |
| dc.date.accessioned | 2026-07-07T09:30:23Z | |
| dc.date.available | 2026-07-07T09:30:23Z | |
| dc.description | In a film with large dielectric constant $κ$ the electric field of an electron spreads inside the film before exiting the film at large distances of order of $κd$ ($d$ is the film width). This leads to the logarithmic Coulomb repulsion between electrons and modifies the shape of the Coulomb gap in the density of localized states in a doped film. As a result the variable range hopping conductivity in such a film has a peculiar temperature dependence, where the domain of the $\ln σ(T) \propto (T_0/T)^{p}$ dependence, with the index $p \simeq 0.7$, is sandwiched between the two domains with $p = 1/2$. | |
| dc.description | Substantial changes made | |
| dc.identifier | https://arxiv.org/abs/0803.3331 | |
| dc.identifier | http://arxiv.org/abs/0803.3331 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/158106 | |
| dc.subject | Disordered Systems and Neural Networks | |
| dc.title | Variable range hopping in thin film with large dielectric constant | |
| dc.type | text |