The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

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dc.creatorMcCamey, D. R.
dc.creatorFrancis, M.
dc.creatorMcCallum, J. C.
dc.creatorHamilton, A. R.
dc.creatorGreentree, A. D.
dc.creatorClark, R. G.
dc.date2004-11-08
dc.date.accessioned2026-07-07T06:33:42Z
dc.date.available2026-07-07T06:33:42Z
dc.descriptionUsing silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the room temperature threshold voltage shift, that the electrical activation of donors at an implant density of 2x10^12 cm^-2 is ~100%.
dc.description11 pages, 10 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0411185
dc.identifierhttp://arxiv.org/abs/cond-mat/0411185
dc.identifierSemiconductor Science and Technology 20, 363 (2005)
dc.identifierdoi:10.1088/0268-1242/20/5/007
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/99283
dc.subjectMaterials Science
dc.titleThe effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
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