Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions

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dc.creatorSharoni, Amos
dc.creatorRamírez, Juan Gabriel
dc.creatorSchuller, Ivan K.
dc.date2008-03-10
dc.date2008-03-19
dc.date.accessioned2026-07-07T10:13:59Z
dc.date.available2026-07-07T10:13:59Z
dc.descriptionThe metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in amplitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump amplitudes, demonstrating an inherent property of the $VO_2$ films. We report a surprising relation between jump amplitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.
dc.description4 papers and 4 figures submitted to PRL
dc.identifierhttps://arxiv.org/abs/0803.1190
dc.identifierhttp://arxiv.org/abs/0803.1190
dc.identifierPhys. Rev. Lett. 101, 026404 (2008)
dc.identifierdoi:10.1103/PhysRevLett.101.026404
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172729
dc.subjectMesoscale and Nanoscale Physics
dc.titleMultiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions
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