Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

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dc.creatorGonz'alez, J. C.
dc.creatorMalachias, A.
dc.creatorde Sousa, J. C.
dc.creatorAndrade, R-Ribeiro
dc.creatorMoreira, M. V. B.
dc.creatorde Oliveira, A. G.
dc.date2008-03-13
dc.date2008-05-14
dc.date.accessioned2026-07-07T09:38:31Z
dc.date.available2026-07-07T09:38:31Z
dc.descriptionWe present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.
dc.identifierhttps://arxiv.org/abs/0803.1951
dc.identifierhttp://arxiv.org/abs/0803.1951
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160835
dc.subjectMaterials Science
dc.titleDirect evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires
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