Engineering the spatial confinement of exciton-polaritons in semiconductors

Simple item page
dc.creatorKaitouni, Reda Idrissi
dc.creatorDaif, Ounsi El
dc.creatorRichard, Maxime
dc.creatorLugan, Pierre
dc.creatorBaas, Augustin
dc.creatorGuillet, Thierry
dc.creatorMorier-Genoud, François
dc.creatorGanière, Jean-Daniel
dc.creatorStaehli, Jean-Louis
dc.creatorSavona, Vincenzo
dc.creatorDeveaud, Benoît
dc.date2006-02-27
dc.date2006-03-05
dc.date.accessioned2026-07-07T13:14:11Z
dc.date.available2026-07-07T13:14:11Z
dc.descriptionWe demonstrate the spatial confinement of electronic excitations in a solid state system, within novel artificial structures that can be designed having arbitrary dimensionality and shape. The excitations under study are exciton-polaritons in a planar semiconductor microcavity. They are confined within a micron-sized region through lateral trapping of their photon component. Striking signatures of confined states of lower and upper polaritons are found in angle-resolved light emission spectra, where a discrete energy spectrum and broad angular patterns are present. A theoretical model supports unambiguously our observations.
dc.identifierhttps://arxiv.org/abs/cond-mat/0602640
dc.identifierhttp://arxiv.org/abs/cond-mat/0602640
dc.identifierPhys. Rev. B 74, 155311 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.155311
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230133
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.subjectOther Condensed Matter
dc.titleEngineering the spatial confinement of exciton-polaritons in semiconductors
dc.typetext

Files

Collections

arXiv