Lattice Expansion of (Ga,Mn)As: The Role of Substitutional Mn and of the Compensating Defects
| dc.creator | Masek, J. | |
| dc.creator | Maca, F. | |
| dc.date | 2005-08-31 | |
| dc.date.accessioned | 2026-07-07T03:06:28Z | |
| dc.date.available | 2026-07-07T03:06:28Z | |
| dc.description | We apply the density-functional technique to determine the lattice constant of GaAs supercells containing Mn_Ga, Mn_int, and As_Ga impurities, and use a linear interpolation to describe the dependence of the lattice constant a of Ga_{1-x}Mn_xAs on the concentrations of these impurities. The results of the supercell calculations confirm that Mn_Ga does not contribute to the lattice expansion. The increase of a is due to both Mn_int and As_Ga, that are both created in the as-grown (Ga,Mn)As in proportion to x, and that are most probably present in a remarkable amount also in the best annealed materials. | |
| dc.description | 3 pages, 2 figures, presented at XXXIV Int. School. on the Physics of Semiconducting Compounds - Jaszowiec 2005, Ustron-Jaszowiec, Poland, June 4-10, 2005 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0508760 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0508760 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/26821 | |
| dc.subject | Materials Science | |
| dc.title | Lattice Expansion of (Ga,Mn)As: The Role of Substitutional Mn and of the Compensating Defects | |
| dc.type | text |