Resonance Fluorescence in Transport through Quantum Dots: Noise Properties

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dc.creatorSánchez, Rafael
dc.creatorPlatero, Gloria
dc.creatorBrandes, Tobias
dc.date2007-03-05
dc.date2007-04-09
dc.date.accessioned2026-07-07T07:55:37Z
dc.date.available2026-07-07T07:55:37Z
dc.descriptionWe study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field and develope a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation (by phononic emission) events as well as their correlation. We find that the quantum noise of both the transmitted electrons and the emitted phonons can be controlled by the manipulation of external parameters such as the driving field intensity or the bias voltage.
dc.description5 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703125
dc.identifierhttp://arxiv.org/abs/cond-mat/0703125
dc.identifierPhys. Rev. Lett. 98, 146805 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/127028
dc.subjectMesoscale and Nanoscale Physics
dc.titleResonance Fluorescence in Transport through Quantum Dots: Noise Properties
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